Graphene Conductive Additive

Energy Storage Materials for Lithium-Ion Batteries
NITRONIX is proud to present industry best Graphene solutions allowing the specific capacity of LiFePO4 to be increased to 163.8 mAh/g, far exceeding the industry average capacity levels between 120 and 150mAh/g at present.

Key Features

  • Higher rate capability
  • Enhanced life cycle
  • Low internal resistance
  • Improved charge/discharge cycle stability
  • Excellent high temperate cycle performance
  • Enable manufacturing cost saving

SEM: A composite LFP/Graphene material


source : http://www.nitronix.com/graphene-conductive-additive/

Graphene Thermal FilmTM

Graphene Thermal Solutions for Mobile Devices

GTFTM (Graphene Thermal Film) is an ultra-thin, lightweight Graphene film with a thermal conductivity at very high levels and is used to help release and diffuse the heat generated by major components or heat sources such as CPUs.

Features

  • High conductivity (> 350W/mK)
  • Cost effective
  • Lightweight & Flexible
  • RoHS Compliant
  • Room temperature & clean manufacturing process

Advantages

  • No peeling effect
  • Free Edge handling
  • High Cost-Performance value

Applications

  • Smartphone
  • Notebook PC
  • Tablet PC

Structure


source : http://www.nitronix.com/gtf-2/

PFC Device Inc.

The Group manufactures and sells power discrete semiconductors under its own 『『PFC'』 brand into the PRC, Taiwan and other Asian regions markets.

The Group sells some of its EPI to the PRC Foundry Company, a wafer foundry in Shenzhen, the PRC, which is one of the five largest suppliers of the Group during the Track Record Period, and is one of the five largest customers of the Group for the three months ended 31 March 2016. Please refer to the section headed 『『Business — Customers — Trading of raw materials'』 in this document for further details on the PRC Foundry Company and the transactions between the Group and the PRC Foundry Company during the Track Record Period.

 

The Group maintains its own research and development team in Taiwan, with a primary focus on improvement of product performance, new product and technology development. The Group's power discrete semiconductors utilised its own patented device structure and manufacturing method, developed by the Group's in-house research and development team. As at the Latest Practicable Date, the Group held 46 patents registered in the USA, Taiwan and the PRC with respect to the device structure and/or manufacturing method of its power discrete semiconductors.

Source : PFC Device - Service, Quality, Innovation

Solution-based Graphene - UltrapheneTM

UltrapheneTM products are comprised entirely of the highest quality solution-based Graphene nanosheets made using NITRONIX's advanced Atomic Layer Planar StriationTM ("ALPSTM") process. UltrapheneTM represents a new class of carbon nanomaterials possessing a range of exciting multi-functional properties that can enable applications across a broad range of industries, including electronics, energy storage, medicine, construction, environmental protection and other areas.

Property \ Product
UltrapheneTMX
EX
UltrapheneTM
X
UltrapheneTM
S
2-4 Layers 0.7 0.4 <1%
5-7 Layers 0.3 0.5 0.4
8+ Layers <1% 0.1 0.6
Average Sheet Size 10um ~ 20um 10um ~ 20um 10um ~ 20um
Solution Type 1.NMP
2.Aqueousw/surfactant
1.NMP
2.Aqueousw/surfactant
1.NMP
2.Aqueousw/surfactant
Graphene Concentration 1mg/ml 0.5mg/ml 0.05mg/ml
Shelf Life 12 months 12 months 12 months

RAMAN & XPS

source : http://www.nitronix.com/ultraphene/

ProMOS

More than 20 years experience in Memory business. Well proven capability in Memory products design, manufacturing, field application, assembly engineering and quality assurance.

Well established product development system and quality management system.

Well established RDL, WLBI, Wafer Level Speed test capability for KGD solution .

Integrated advanced assembly solution infrastructure for KGD, MCP, SIP and POP.

Complete series of SD/ DDR/ DDR2/ DDR3 SDRAM...

link : http://www.promos.com.tw

ISSI

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) communications, (iii) digital consumer, and (iv) industrial and medical. Our primary products are high speed and low power SRAM and low and medium density DRAM. The Company also designs and markets NOR flash products and high performance analog and mixed signal integrated circuits. We target high-growth markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even through periods of tight manufacturing capacity.

Our primary products are complete series of SRAM/ DRAM/ SPI Flash...

link : http://www.issi.com/US/Index.shtml

MT.MOSEL

We provide a range of consumer dram, extensive application in graphics card, MID, Table PC, Communication, STB, TV box, LCD TV, GPS, DVD players, DSC...etc.

Type Density Config. Part no. Speed VDD Package
DDR3 2Gb 256MX8 ED3E25608CE 1333MHz 1.5V 78-ball FBGA
DDR3 2Gb 128MX16 ED3N12816DU 1333MHz 1.5V 96-ball FBGA
DDR3 1Gb 128MX8 ED3P12808AE 1333MHz 1.5V 78-ball FBGA
DDR3 1Gb 64MX16 ED31G16EB 1333MHz 1.5V 96-ball FBGA
DDR2 1Gb 128MX8 ED3P12808CE 800MHz 1.8V 84-ball FBGA
DDR2 1Gb 64MX16 E59C1G01168QB 800MHz 1.8V 84-ball FBGA
DDR1 256Mb 16MX16 EDD2516AETA 400MHz 2.5V 66-pin TSOPII

  • Pb and Halogen free.
  • Working tempratue : 0~70°C.
  • Data sheet is availale upon request.